infrared led chip gaas/gaa s 1. material substrate gaas (p type) epitaxial layer gaas (n/p type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy (au/sn eutectic metal) 3. electro-optical parameter s ymbo l min typ max unit condition characteristics f orward voltag e v f 1.25 1.4 v if=30ma reverse voltag e v r 8 v ir=10ua power p o 9.0 11.5 mw if=100ma p 940 nm if=20ma ? 45 nm if=20ma note : power is measured by sorter e/t system with bare chip. 4. mechanical data (a) emission area -------------------- - 14mil x 14mil (b) bottom area -------------------- - 15mil x 15mil (c) bonding pad -------------------- - 130um (d) chip thickness -------------------- - 8.2mil (e) junction height -------------------- - 1.1mil n side electrode p side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA9438EU wavelength auk corp. (c) (a) (b) (e) (d) substrate n epi p epi
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